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ZXMN3A04K
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
30
1.0
0.5
100
V
A
nA
V
I D = 250 A, V GS =0V
V DS = 30V, V GS =0V
V GS =±20V, V DS =0V
I D = 250mA, V DS =V GS
Static drain-source on-state resistance
(1)
R DS(on)
0.02
V GS = 10V, I D = 12A
0.03
V GS = 4.5V, I D = 9.8A
Forward transconductance
(1) (3)
g fs
22.1
S
V DS = 15V, I D = 12.6A
DYNAMIC
(3)
Input capacitance
C iss
1890
pF
Output capacitance
Reverse transfer capacitance
C oss
C rss
349
218
pF
pF
V DS = 15V, V GS =0V
f=1MHz
SWITCHING
(2) (3)
Turn-on-delay time
t d(on)
5.2
ns
Rise time
Turn-off delay time
Fall time
Total gate charge
t r
t d(off)
t f
Q g
6.1
38.1
20.2
19.9
ns
ns
ns
nC
V DD = 15V, I D = 1A
R G ? 6.0 , V GS = 10V
V DS = 15V, V GS = 5V
I D = 6.5A
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
36.8
5.8
7.1
nC
nC
nC
V DS = 15V, V GS = 10V
I D = 6.5A
SOURCE-DRAIN DIODE
Diode forward voltage (1)
Reverse recovery time (3)
Reverse recovery charge (3)
V SD
t rr
Q rr
0.85
18.4
11
0.95
V
ns
nC
T j =25°C, I S = 6.8A,
V GS =0V
T j =25°C, I S = 2.3A,
di/dt=100A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - FEBRUARY 2004
SEMICONDUCTORS
4
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